Тонкопленочные гетероструктуры In-=SUB=-x-=/SUB=-Al-=SUB=-y-=/SUB=-Ga-=SUB=-1-x-y-=/SUB=-As-=SUB=-z-=/SUB=-Sb-=SUB=-1-z-=/SUB=-/GaSb, выращенные в поле температурного градиента

Novel Magnetic and Optical Properties of Sn_1−xZn_xO₂ Nanoparticles

Structure Symmetry Determination and Magnetic Evolution in Sr₂Ir_{1−<em>x</em>}Rh_<em>x</em>O₄

A non-vacuum process for preparing nanocrystalline CuIn_1−xGa_xSe₂ materials involving an open-air solvothermal reaction

A non-vacuum, two-step process has been used to prepare a series of nanocrystalline CuIn1−xGaxSe2 (x = 0, 0.25, 0.5, 0.75, 1) materials. An open-air solvothermal preparation in triethylenetetramine solvent was followed by annealing at 500 °C in a nitrogen atmosphere for 20 min. All materials have mixed clustered plate, spherical particle, and nanorod morphologies with the smallest particle diam...

Ambipolar field effect in the ternary topological insulator (Bi_<i>x</i>Sb_1-<i>x</i>)₂Te₃ by composition tuning

Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties1–9, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping10–12, and these mask the contribution...

Toward the Ultimate Limit of Phase Change in Ge₂Sb₂Te₅

The limit to which the phase change memory material Ge2Sb2Te5 can be scaled toward the smallest possible memory cell is investigated using structural and optical methodologies. The encapsulation material surrounding the Ge2Sb2Te5 has an increasingly dominant effect on the material’s ability to change phase, and a profound increase in the crystallization temperature is observed when the Ge2Sb2Te...